First-principles study of hydrogenated amorphous silicon
نویسندگان
چکیده
K. Jarolimek,1,2 R. A. de Groot,2 G. A. de Wijs,2 and M. Zeman1 1DIMES, Delft University of Technology, Feldmannweg 17, 2600 GB Delft, The Netherlands 2Electronic Structure of Materials, Institute for Molecules and Materials, Faculty of Science, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands Received 23 May 2008; revised manuscript received 9 February 2009; published 20 April 2009
منابع مشابه
Amorphous Silicon Flat Panel Imagers for Medical Application
A new gamma camera based on hydrogenated amorphous silicon (a-Si:H) pixel arrays to be used in nuclear medicine is introduced. Various performance characteristics of a-Si:H imagers are reviewed and compared with those of currently used equipment. An important component in the a-Si:H imager is the scintillator screen. A new approach for fabrication of high resolution CsI(Tl) scintillator layers,...
متن کاملHydrogen dynamics and light-induced structural changes in hydrogenated amorphous silicon
We use accurate first-principles methods to study the network dynamics of hydrogenated amorphous silicon, including the motion of hydrogen. In addition to studies of atomic dynamics in the electronic ground state, we also adopt a simple procedure to track the H dynamics in light-excited states. Consistent with recent experiments and computer simulations, we find that dihydride structures are fo...
متن کاملLong-range fluctuations of random potential landscape as a mechanism of 1/f noise in hydrogenated amorphous silicon
We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silic...
متن کاملInterference fringe-free transmission spectroscopy of amorphous thin films
Articles you may be interested in Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm 2 / V s for electrons and 0.1 cm 2 / V s for holes Appl. Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys Appl. Effect o...
متن کاملDefects in Amorphous Semiconductors: Amorphous Silicon
Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrogenated amorphous silicon. The general differences between defect phenomena in crystalline and amorphous hosts are described, and the special importance of the electron–phonon coupling is stressed. Detailed calculations for amorphous Si are presented using accurate first principles (density-functional) tech...
متن کاملGeneration of correlated photons in hydrogenated amorphous-silicon waveguides.
We report the first (to our knowledge) observation of correlated photon emission in hydrogenated amorphous-silicon waveguides. We compare this to photon generation in crystalline silicon waveguides with the same geometry. In particular, we show that amorphous silicon has a higher nonlinearity and competes with crystalline silicon in spite of higher loss.
متن کامل